IRF820B/IRFS820B
November 2001
IRF820B/IRFS820B
500V N-Channel MOSFET
General Description
These N-Channel enhancement ...
IRF820B/IRFS820B
November 2001
IRF820B/IRFS820B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
G G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRF820B 500 2.5 1.6 8.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
IRFS820B 2.5 * 1.6 * 8.0 * 200 2.5 4.9 5.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for...