IRFS840A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 Ω (Typ.) 1 IRFS840A BVDSS = 500 V RDS(on) = 0.85 Ω ID = 4.6 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds 1 O o o Value 500 4.6 2.9 32 + _ 30 647 4.6 4.4 3.5 44 0.35 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R θ JC R θ JA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 2.86 62.5 Units o C /W Rev. B ©1999 Fairchild Semiconductor Corporation IRFS840A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source ...