Document
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.)
Ο
IRFS140A
BVDSS = 100 V RDS(on) = 0.052 Ω ID = 23 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 23 16.2
1 O
Ο
Units V A A V mJ A mJ V/ns W W/ C
Ο
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C )
Ο
120 + _ 20 529 23 7.2 6.5 72 0.48 - 55 to +175
O 1 O 1 O 3 O
2
Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
Ο
C
300
Thermal Resistance
Symbol R θJC R θJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 2.08 40 Units
Ο
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFS140A
Ο
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------20.15 325 148 18 18 90 56 60 10.8 27.9 --4.0 100 -100 10 100 0.052 -380 170 50 50 180 120 78 --nC ns µA Ω Ω pF V V/ C V nA
Ο
Test Condition VGS=0V,ID=250 µA ID=250µ A See Fig 7 VDS=5V,ID=250 µA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=11.5A VDS=40V,ID=11.5A
4 O 4 O
Ο
1320 1710
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=28A, RG=9.1Ω See Fig 13 VDS=80V,VGS=10V, ID=28A See Fig 6 & Fig 12
4 O 5 O 4 O 5 O
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O
Min. Typ. Max. Units --------132 0.63 23 120 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=23A,VGS=0V TJ=25 C ,IF=28A diF/dt=100A/ µs
4 O
Ο Ο
Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=1.5mH, I AS=23A, V DD=25V, R G=27Ω , Starting T J =25 C O 3 ISD < _ 400A/ µs, V DD< _ 28A, di/dt < _ BVDSS , Starting T J =25 oC O _2% Pulse Test : Pulse Width = 250 s, Duty Cycle < µ 4 O Essentially Independent of Operating Temperature 5 O
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
102
VGS
IRFS140A
Fig 2. Transfer Characteristics
102
[A]
ID , Drain Current
ID , Drain Current
[A]
Top :
15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
175 oC
101
101 25 oC @ Notes : =0V 1. V GS 2. V = 40 V DS 3. 250 µs Pulse Test
100 10-1 100
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 101
- 55 oC
100
2
4
6
8
10
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ Ω] Drain-Source On-Resistance
0 . 0 8
Fig 4. Source-Drain Diode Forward Voltage
1 02
0 . 0 6
VGS = 10 V
0 . 0 4
IDR , Reverse Drain Current
1 01
VGS = 20 V 0 . 0 2 =2 5 oC 1 2 0
1 7 5 oC 2 5 oC 1 00 0 . 4
@N o t e s: 1 . VGS = 0 V 2 .2 5 0 µs P u l s eT e s t 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 2 . 2 2 . 4
@N o t e : TJ 0 . 0 0 0 30 60 90
0 . 6
0 . 8
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
2 5 0 0 Ciss= Cgs+ C h o r t e d) gd ( C ds= s Coss= Cds+ C gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
[pF]
VGS , Gate-Source Voltage
2 0 0 0 C iss 1 5 0 0 C oss 1 0 0 0 C rss 5 0 0
Crss= Cgd
1 0
VDS = 2 0V 0V VDS = 5 VDS = 8 0V
Capacitance
@N o t e s: 1 . VGS = 0 V 2 .f=1M H z
5
@N o t e s : ID = 2 8 . 0A 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0
00 10
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRFS140A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : = 10 V 1. V GS = 14.0 A 2. I D
0.9
@ Notes : =0V 1. V GS = 250 µA 2. I D
0.5
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
200
0.0 -75
-50
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
TJ , Junction Temperature [ oC]
.