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IRFS140A Dataheets PDF



Part Number IRFS140A
Manufacturers Fairchild
Logo Fairchild
Description Advanced Power MOSFET
Datasheet IRFS140A DatasheetIRFS140A Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IRFS140A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 23 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous D.

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IRFS140A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 23 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 100 23 16.2 1 O Ο Units V A A V mJ A mJ V/ns W W/ C Ο Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Ο 120 + _ 20 529 23 7.2 6.5 72 0.48 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο C 300 Thermal Resistance Symbol R θJC R θJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 2.08 40 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation IRFS140A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------20.15 325 148 18 18 90 56 60 10.8 27.9 --4.0 100 -100 10 100 0.052 -380 170 50 50 180 120 78 --nC ns µA Ω Ω pF V V/ C V nA Ο Test Condition VGS=0V,ID=250 µA ID=250µ A See Fig 7 VDS=5V,ID=250 µA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=11.5A VDS=40V,ID=11.5A 4 O 4 O Ο 1320 1710 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=28A, RG=9.1Ω See Fig 13 VDS=80V,VGS=10V, ID=28A See Fig 6 & Fig 12 4 O 5 O 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------132 0.63 23 120 1.5 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=23A,VGS=0V TJ=25 C ,IF=28A diF/dt=100A/ µs 4 O Ο Ο Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=1.5mH, I AS=23A, V DD=25V, R G=27Ω , Starting T J =25 C O 3 ISD < _ 400A/ µs, V DD< _ 28A, di/dt < _ BVDSS , Starting T J =25 oC O _2% Pulse Test : Pulse Width = 250 s, Duty Cycle < µ 4 O Essentially Independent of Operating Temperature 5 O N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 102 VGS IRFS140A Fig 2. Transfer Characteristics 102 [A] ID , Drain Current ID , Drain Current [A] Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 175 oC 101 101 25 oC @ Notes : =0V 1. V GS 2. V = 40 V DS 3. 250 µs Pulse Test 100 10-1 100 @ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 101 - 55 oC 100 2 4 6 8 10 VDS , Drain-Source Voltage [V] [A] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current RDS(on) , [ Ω] Drain-Source On-Resistance 0 . 0 8 Fig 4. Source-Drain Diode Forward Voltage 1 02 0 . 0 6 VGS = 10 V 0 . 0 4 IDR , Reverse Drain Current 1 01 VGS = 20 V 0 . 0 2 =2 5 oC 1 2 0 1 7 5 oC 2 5 oC 1 00 0 . 4 @N o t e s: 1 . VGS = 0 V 2 .2 5 0 µs P u l s eT e s t 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 2 . 2 2 . 4 @N o t e : TJ 0 . 0 0 0 30 60 90 0 . 6 0 . 8 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 2 5 0 0 Ciss= Cgs+ C h o r t e d) gd ( C ds= s Coss= Cds+ C gd Fig 6. Gate Charge vs. Gate-Source Voltage [V] [pF] VGS , Gate-Source Voltage 2 0 0 0 C iss 1 5 0 0 C oss 1 0 0 0 C rss 5 0 0 Crss= Cgd 1 0 VDS = 2 0V 0V VDS = 5 VDS = 8 0V Capacitance @N o t e s: 1 . VGS = 0 V 2 .f=1M H z 5 @N o t e s : ID = 2 8 . 0A 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 00 10 1 10 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] IRFS140A BVDSS , (Normalized) Drain-Source Breakdown Voltage N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance 3.0 Fig 7. Breakdown Voltage vs. Temperature 1.2 2.5 1.1 2.0 1.0 1.5 1.0 @ Notes : = 10 V 1. V GS = 14.0 A 2. I D 0.9 @ Notes : =0V 1. V GS = 250 µA 2. I D 0.5 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC] .


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