IRFS23N15D

PD - 95535 SMPS MOSFET IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 150V 0.090Ω 23A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB IRFB23N15D D2Pak TO-262 IRFS23N15D IRFSL23N15D Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 23 17 92 3.8 136 0.9 ± 30 4.1 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter Units A W W/°C V V/ns °C Notes  through ‡ are on page 11 www.irf.com 1 7/20/04 IRFB/IRFS/IRFSL23N15DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward...