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IRFS31N20D Dataheets PDF



Part Number IRFS31N20D
Manufacturers IRF
Logo IRF
Description Power MOSFET
Datasheet IRFS31N20D DatasheetIRFS31N20D Datasheet (PDF)

PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB31N20D and Current l D2Pak IRFS31N20D TO-262 IRFSL31N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ T.

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PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB31N20D and Current l D2Pak IRFS31N20D TO-262 IRFSL31N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 31 21 124 3.1 200 1.3 ± 30 2.1 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V Input Forward Converters Notes  through ‡ are on page 11 www.irf.com 1 2/14/00 IRFB/IRFS/IRFSL31N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.25 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.082 Ω VGS = 10V, ID = 18A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions ––– S VDS = 50V, ID = 18A 110 I D = 18A 27 nC VDS = 160V 49 VGS = 10V, „ ––– VDD = 100V ––– ID = 18A ns ––– RG = 2.5Ω ––– R D = 5.4Ω „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V … Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 70 18 33 16 38 26 10 2370 390 78 2860 150 170 Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 420 18 20 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.50 ––– ––– Max. 0.75 ––– 62 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 31 ––– ––– showing the A G integral reverse ––– ––– 124 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ ––– 200 300 ns TJ = 25°C, IF = 18A ––– 1.7 2.6 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFB/IRFS/IRFSL31N20D 1000 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP 100 10 1 5.5V 20µs PULSE WIDTH TJ = 175 °C 1 10 100 5.5V 0.1 0.1 1 20µs PULSE WIDTH TJ = 25 °C 10 100 1 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 ID = 30A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 100 TJ = 175 ° C 2.0 10 1.5 TJ = 25 ° C 1 1.0 0.5 0.1 5 6 7 8 V DS = 50V 20µs PULSE WIDTH 9 10 11 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFB/IRFS/IRFSL31N20D 100000 20 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + Cgd ID = 18A VDS = 160V VDS = 100V VDS = 40V VGS , Gate-to-Source Voltage (V) 16 10000 C, Capacitance(pF) Ciss 1000 12 Coss 100 8 Crss 4 10 1 10 100 1000 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-.


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