IRFS3307

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 5.0m: 6.3m: 130A GDS TO-220AB IRFB3307 GDS D2Pak IRFS3307 GDS TO-262 IRFSL3307 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V dContinuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics eEAS (Thermally limited) Single Pulse Avalanche Energy ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak www.irf.com Max. ™130 91™ 510 250 1.6 ± 20 11 -55 to + 175 300 x x10lb in (1.1N m) 270 See Fig. 14, 15, 16a, 16b Typ. ––– 0.50 ––– ––– Max. 0.61 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °...