IRFS41N15D

Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 150V PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D HEXFET® Power MOSFET RDS(on) max ID 0.045: 41A TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM c Pulsed Drain Current PD @TA = 25°C Power Dissipation, D2Pak PD @TC = 25°C Power Dissipation, TO-220 PD @TC = 25°C Power Dissipation, Fullpak Linear Derating Factor, TO-220 Linear Derating Factor, Fullpak VGS dv/dt TJ TSTG Gate-to-Source Voltage e Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC Junction-to-Case RθJC Junction-to-Case, Fullpak Rθcs h Case-to-Sink, Flat, Greased Surface RθJA h Junction-to-Ambient, TO-220 RθJA i Junction-to-Ambient, D2Pak RθJA Junction-to-Ambient, Fullpak Notes  through ‡ are on page 12 www.irf.com Max. 41 29 164 3.1 200 48 1.3 0.32 ± 30 2.7 -55 to + 175 300 (1.6mm from case ) 1.1(10) Typ. ––– ––– 0.50 ––– ––– ––– Max. 0.75 3.14 ––– 62 40 65 Units A W W/°C V V/ns °C Nm (lbfin...