Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability
G
PD - 96902A
IRFB4410 IRFS4410 IRFSL4410
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max.
S ID
100V
8.0m: 10m: 96A
G DS
TO-220AB IRFB4410
G DS
D2Pak IRFS4410
G DS
TO-262 IRFSL4410
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current c
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case k
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA Junction-to-Ambient, TO-220 k RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk
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Max. 96c 68c 380 250 1.6 ± 20 19 -55 to + 175
300
10lbxin (1.1Nxm)
220 See Fig. 14, 15, 16a, 16b
Typ. ––– 0.50 ––– –––
Max. 0.61 ––– 62 40
Units A
W W/°C
V V/ns °C...
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