IRFS4610

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits G l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96906C IRFB4610 IRFS4610 IRFSL4610 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 100V 11m: 14m: 73A G DS TO-220AB IRFB4610 G DS D2Pak IRFS4610 G DS TO-262 IRFSL4610 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current f Maximum Power Dissipation Linear Derating Factor VGS dV/dt Gate-to-Source Voltage Peak Diode Recovery e TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d IAR Avalanche Current c EAR Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC Junction-to-Case j RθCS Case-to-Sink, Flat Greased Surface , TO-220 RθJA Junction-to-Ambient, TO-220 j RθJA Junction-to-Ambient (PCB Mount) , D2Pak ij Max. 73 52 290 190 1.3 ± 20 7.6 -55 to + 175 300 10lbxin (1.1Nxm) 370 See Fig. 14, 15, 16a, 16b, Typ. ––– 0.50 ––– ––– Max. 0.77 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ...