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IRFS510A
Advanced Power MOSFET
Description
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) 1 Ο IRFS510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 4.5 A TO-220F 2 3 1.Gate 2. Drain 3....
IRF
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