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UMZ8N

Rohm

Power management (dual transistors)

EMZ8 / UMZ8N Transistors Power management (dual transistors) EMZ8 / UMZ8N !Feature 1) Both a 2SA2018 chip and 2SC2412K ...


Rohm

UMZ8N

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Description
EMZ8 / UMZ8N Transistors Power management (dual transistors) EMZ8 / UMZ8N !Feature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. !External dimensions (Units : mm) EMZ8 0.22 (4) (5) (6) (3) (2) (3) (2) (1) ROHM : EMT6 EIAJ : Each lead has same dimensions (4) 0.65 1.3 0.7 0.65 Tr2 Tr1 0.2 (3) UMZ8N (2) 0.5 !Equivalent circuits 1.2 1.6 (1) 0.13 0.5 0.5 1.0 1.6 (6) (4) (5) (6) 1.25 2.1 0.15 0.1Min. 0to0.1 ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits Tr1 −15 −12 Tr2 60 50 Unit V V V mA mW °C °C −6 7 −150 150 150 (TOTAL) 150 −55~+150 ∗ ∗ 120mW per element must not be exceeded. !Package, marking, and packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) EMZ8 EMT6 Z2 T2R 8000 UMZ8N UMT6 Z2 TR 3000 (1) 2.0 (5) EMZ8 / UMZ8N Transistors !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −15 −12 −6 − − − 270 − − Typ. − − − − − −0.1 − 260 6.5...




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