IRFR9110

IRFR9110, IRFU9110 Data Sheet July 1999 File Number 4001.3 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17541. Features 3.1A, 100V rDS(ON) = 1.200Ω Temperature Compensating PSPICE™ Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFR9110 IRFU9110 PACKAGE TO-252AA TO-251AA BRAND IF9110 IF9110 G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., IRFR91109A. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) 4-77 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFR9110, IRFU9110 Absolute Maximum Ratings TC = 25oC, Unless Otherwi...