IRFR9120, IRFU9120
Data Sheet July 1999 File Number
3987.4
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applicatio...
