IRFR9120

IRFR9120, IRFU9120 Data Sheet July 1999 File Number 3987.4 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17501. Features 5.6A, 100V rDS(ON) = 0.600Ω Temperature Compensating PSPICE™ Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFR9120 IRFU9120 PACKAGE TO-252AA TO-251AA BRAND IF9120 IF9120 G NOTE: When ordering use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, e.g., IRFR91209A. S Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) 4-83 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE™ is a trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFR9120, IRFU9120 Absolute Maximum Ra...