IRFR9220

IRFR9220, IRFU9220 Data Sheet July 1999 File Number 4015.3 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17502. Features 3.6A, 200V rDS(ON) = 1.500Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFR9220 IRFU9220 PACKAGE TO-252AA TO-251AA BRAND IF9220 IF9220 G NOTE: When ordering use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-252AA 4-89 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFR9220, IRFU9220 A...