TMD1925-3

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TMD1925-3 TMD1925-3 Preliminary „ „ Suitable for Digital Communications Low Intermodulation Distortion „ „ High Power P1dB=34dBm(min) @1.9 to 2.5GHz High Gain G1dB=27dB(min)@1.9 to 2.5GHz ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER STORAGE TEMPERATURE ( Ta= 25°C ) SYMBOL VDD VGG Pin Tstg UNIT V V dB °C RATINGS 15 -4 13 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Input Return Loss Output Return Loss 3rd Order Intermodulation Distortion IDD   IM3 G1dB SYMBOL f P1dB ( Ta= 25°C) CONDITION UNIT GHz dBm VDD=10V IDDset=1.2A @ P1dB Small Level NOTE MIN. 1.9 34.0 27.0  10   TYP.  35.0 29.0 1.6  10 -52 MAX. 2.5   1.9    dB A dB dB dBc Signal NOTE: Two Tone Test,Po=17dBm(Single Carrier Level) ELECTRICAL CHARACTERISTICS ( Ta= 25°C) CHARACTERISTICS Thermal Resistance ‹ SYMBOL Rth (c-c) CONDITION Channel to Case UNIT °C/W MIN  TYP 6 MAX 6.5 ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information ...