MTP6N60
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE MTP6N60
s s s s s
V DSS 600 V
R DS( on) < 1.2 Ω
ID 6.8 A
TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION
3 1 2
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS)...
