BD410

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN EPITAXIAL SILICON POWER TRANSISTOR BD410 TO-126 Plastic Package EC B ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Collector Current Total Power Dissipation @ Ta=25 ºC @ Tc=25 ºC Storage Temperature Range Lead Temperature 1.6mm from Case for 10 Seconds. SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj, Tstg TL VALUE 500 325 5.0 1.0 1.5 1.25 20 - 55 to +125 260 UNIT V V V A W ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified ) DESCRIPTION Collector Cut off Current Collector -Base Voltage Collector Emitter Voltage Emitter Base Voltage DC Current Gain SYMBOL ICES VCBO VCEO * VEBO hFE TEST CONDITION VCE=300V, IB=0 IC=500µA, IE=0 IC=10mA, IB=0 IE=50µA, IC=0 IC=5mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V IC=100mA, IB=10mA IC=100mA, IB=10mA MIN 500 325 5 25 30 20 TYP MAX 100 UNIT µA V V V 240 1.5 0.5 V V Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Dynamic Characteristics DESCRIPTION Output Capacitance Input Capacitance *Pulsed Test tp=300µs,Duty Cycle<2% VBE (Sat) VCE (Sat) SYMBOL TEST CONDITION Cobo IE=0, VCB=10V, f=1MHz Cibo IE=0, VEB=0.5V, f=1MHz MIN TYP 5.5 90 MAX UNIT pF pF Continental Device India Limited Data Sheet Page 1 of 3 BD410 TO-126 Plastic Package TO-126 (SOT-32) Plastic Package A C DIM A B MIN 7.4 10....