STD2NA50

STD2NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD2NA50 V DSS 500 V R DS(on) <4Ω ID 2.2 A s s s s s s s s s TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 2 1 1 3 IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") APPLICATIONS MEDIUM CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 500 500 ± 30 2.2 1.4 8.8 45 0.36 -65 to 150 150 Unit V V V A A A W W/ o C o o C C () Pulse width limited by safe operating area March 1996 1/6 STD2NA50 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.78 100 1 275 o o C/W C/W o C/W o...