STD2NB40

® STD2NB40 N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD2NB40 s s s s s s V DSS 400 V R DS(on) <4Ω ID 2A TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL IPAK TO-251 (Suffix "-1") 3 2 1 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt Tstg Tj July 1999 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 400 400 ± 30 2 1.26 8 40 0.32 3.5 -65 to 150 150 ( 1) ISD ≤2A, di/dt ≤ 200 A/µs, VDD...