DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2141
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK21...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2141
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2141 is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2 2.7 ± 0.2
Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A)
15.0 ± 0.3
LOW Ciss
Ciss = 1150 pF TYP.
3 ± 0.1 1 2 3 4 ± 0.2
High Avalanche Capability Ratings Isolated TO-220 (MP-45F) Package
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
VDSS VGSS ID (DC) ID (pulse)*
600 ± 30 ± 6.0 ± 24 35 2.0 –55 to +150 150 6.0 12
V V A A W W °C °C A mJ
1 2 3 2.54 TYP. 0.7 ± 0.1
13.5 MIN. 0.65 ± 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipation (Ta = 25 °C) PT2 Storage Temperature Channel Temperature Single Avalanche Current Single Avalanche Energy
*PW ≤ 10 µs, Duty Cycle ≤ 1% **Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
1.3 ± 0.2 1.5 ± 0.2 2.54 TYP.
12.0 ± 0.2
2.5 ± 0.1
Tstg Tch IAS** EAS**
1. Gate 2. Drain 3. Source
ISOLATED TO-220 (MP-45F)
Drain (D)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Source (S) Body diode Gate (G)
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