STB60NF06

N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET™ POWER MOSFET TYPE STB60NF06 s s s s STB60NF06 VDSS 60V RDS(on) < 0.016 Ω ID 60A s TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 D2PAK DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 60 42 240 110 0.73 4 –65 to 175 175 (1) I SD≤ 60A, di/dt≤400 A/µs, VDD≤ 24V, Tj≤TjMAX Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area February 2001 1/9 STB60NF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junctio...