STB6NA80
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STB6NA80
n n n n n n n n
V DSS 800 V
R DS(on ) < 1.9 Ω
ID 5.7 A
n
TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (...
