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IRFP250A

Advanced Power MOSFET

Description

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 IRFP250A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 32 A TO-3P 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings S...

Fairchild

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