PC66 Unbuffered DIMM
KMM366S1623DTL
Revision History
Revision 0.0(July 7, 1999)
PC66 Unbuffered DIMM
• Changed tRDL from 1CLK to 2CLK in OP...
Description
KMM366S1623DTL
Revision History
Revision 0.0(July 7, 1999)
PC66 Unbuffered DIMM
Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. Skip ICC4 value of CL=2 in DC characteristics in datasheet. Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE. Symbol Change Notice
IIL IIL IOL Before Input leakage current (inputs) Input leakage current (I/O pins) Output open @ DC characteristic table ILI Io After Input leakage current Output open @ DC characteristic table
Test Condition in DC CHARACTERISTIC Change Notice
Symbol ICC2P , ICC3P ICC2N , ICC3N ICC4 Before CKE ≤ VIL(max), tCC = 15ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns 2 Banks activated After CKE ≤ VIL(max), tCC = 10ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 4 Banks activated
Added Notes @OPERATING AC PARAMETER
Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.
REV. 0.0 July 1999
KMM366S1623DTL
KMM366S1623DTL SDRAM DIMM
PC66 Unbuffered DIMM
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung KMM366S1623DTL is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623DTL consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-...
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