HFA200MD40D

PD-2.510 rev. A 02/99 HEXFRED Features HFA200MD40D TM Ultrafast, Soft Recovery Diode V R = 400V V F(typ.)ƒ = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.)ƒ = 270A/µs • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Anode 1 AC Cathode 2 Isolated Base Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ T C = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current  Non-Repetitive Avalanche Energy ‚ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range TO-244AB (ISOLATED) Max. 400 172 83 1200 1.4 278 111 -55 to +150 Units V A mJ W C Thermal - Mechanical Characteristics Parameter RthJC RthCS Wt Junction-to-Case, Single Leg Conducting Junction-to-Case, Both Legs Conducting Case-to-S...