2SB874

2SB874 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1177 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg 1 Rating –100 –60 –5 –2 –3 20 150 –55 to +150 Unit V V V A A W °C °C 2SB874 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –100 –60 –5 — — 1 Typ — — — — — — — — –0.6 250 50 Max — — — –1.0 –1.0 200 — –1.4 –1.0 — — Unit V V V µA µA Test conditions IC = –1 mA, IE = 0 IC = –10 mA, RBE = ∞ IE = –1 mA, IC = 0 VCB = –80 V, IE = 0 VEB = –5 V, IC = 0 VCE = –5 V, IC = –0.5 A* VCE = –5 V, IC = –2 A* 2 2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio V(BR)EBO ICBO IEBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) fT Cob 60 40 — — — — V V MHz pF VCE = –5 V, IC = –2 A* 2 IC = –1.5 A IB = –0.15 A* VCE = –5 V, IC = –0.5 A* 2 2 VCB = –10 V, IE = 0, f = 1 MHz Notes: 1. The 2SB874 is grouped by hFE as follows. 2. Pulse test B 60 to 120 C 100 to 200 Maximum ...