MPSW06

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW05/D One Watt Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW05 MPSW06* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW05 60 60 4.0 500 1.0 8.0 2.5 20 – 55 to +150 MPSW06 80 80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW05 MPSW06 ICBO MPSW05 MPSW06 IEBO — — — 0.1 0.1 0.1 µAdc V(BR)CEO MPSW05 MPSW06 V(BR)EBO ICES — — 0.5 0.5 µAdc 60 80 4.0 — — — Vdc µAdc Vdc v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola reco...