MPSW45

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW45/D One Watt Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 MPSW45 MPSW45A* *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW45 40 50 12 1.0 1.0 8.0 2.5 20 – 55 to +150 MPSW45A 50 60 12 1.0 Unit Vdc Vdc Vdc Adc Watts mW/°C Watts mW/°C °C 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSW45 MPSW45A IEBO V(BR)CES MPSW45 MPSW45A V(BR)CBO MPSW45 MPSW45A V(BR)EBO ICBO — — — 100 100 100 nAdc 50 60 12 — — — Vdc nAdc 40 50 — — Vdc Vdc Preferred devices are Motorola recommended choices for future use and best overall value. Motor...