MPSW51

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW51/D One Watt High Current Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW51 MPSW51A* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range MPSW51 MPSW51A MPSW51 MPSW51A Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –30 –40 –40 –50 –5.0 –1000 1.0 8.0 2.5 20 – 55 to +150 Unit Vdc Vdc CASE 29–05, STYLE 1 TO–92 (TO–226AE) Vdc mAdc Watts mW/°C Watts mW/°C °C 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –40 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW51 MPSW51A IEBO V(BR)CEO MPSW51 MPSW51A V(BR)CBO MPSW51 MPSW51A V(BR)EBO ICBO — — — –0.1 –0.1 –0.1 µAdc –40 –50 –5.0 — — — Vdc µAdc –30 –40 — — Vdc Vdc v 300 ms, Duty Cycle v 2.0%...