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MPSW56 Dataheets PDF



Part Number MPSW56
Manufacturers Motorola
Logo Motorola
Description One Watt Amplifier Transistors
Datasheet MPSW56 DatasheetMPSW56 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW55/D One Watt Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW55 MPSW56* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO .

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW55/D One Watt Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW55 MPSW56* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW55 –60 –60 –4.0 –500 1.0 8.0 2.5 20 – 55 to +150 MPSW56 –80 –80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –40 Vdc, IB = 0) (VCE = –60 Vdc, IB = 0) Collector Cutoff Current (VCB = –40 Vdc, IE = 0) (VCB = –60 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO — — — –0.1 –0.1 –0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES — — –0.5 –0.5 µAdc –60 –80 –4.0 — — — Vdc µAdc Vdc v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –250 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –250 mAdc, IB = –10 mAdc) Base–Emitter On Voltage (IC = –250 mAdc, VCE = –5.0 Vdc) hFE 100 50 VCE(sat) VBE(on) — — — — –0.5 –1.2 Vdc Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –250 mAdc, VCE = –5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = –10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cobo 50 — — 15 MHz pF v 300 ms, Duty Cycle v 2.0%. 400 TJ = 125°C hFE, DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 –0.5 –0.7 VCE = –1.0 V –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) –50 –70 –100 –200 –300 –500 Figure 1. DC Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) –1.0 TJ = 25°C –0.8 V, VOLTAGE (VOLTS) –1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V –0.6 IC = –10 mA –0.4 –50 mA –100 mA –250 mA –500 mA –0.4 –0.2 –0.2 VCE(sat) @ IC/IB = 10 0 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA) –10 –20 –50 0 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 Figure 2. Collector Saturation Region Figure 3. “On” .


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