Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSW55/D
One Watt Amplifier Transistors
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPSW55 MPSW56*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW55 –60 –60 –4.0 –500 1.0 8.0 2.5 20 – 55 to +150 MPSW56 –80 –80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C
1 2 3
CASE 29–05, STYLE 1 TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –40 Vdc, IB = 0) (VCE = –60 Vdc, IB = 0) Collector Cutoff Current (VCB = –40 Vdc, IE = 0) (VCB = –60 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO — — — –0.1 –0.1 –0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES — — –0.5 –0.5 µAdc –60 –80 –4.0 — — — Vdc µAdc Vdc
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
MPSW55 MPSW56
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –250 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –250 mAdc, IB = –10 mAdc) Base–Emitter On Voltage (IC = –250 mAdc, VCE = –5.0 Vdc) hFE 100 50 VCE(sat) VBE(on) — — — — –0.5 –1.2 Vdc Vdc —
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –250 mAdc, VCE = –5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = –10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cobo 50 — — 15 MHz pF
v 300 ms, Duty Cycle v 2.0%.
400 TJ = 125°C hFE, DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 –0.5 –0.7
VCE = –1.0 V
–1.0
–2.0
–3.0
–5.0
–7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA)
–50
–70
–100
–200
–300
–500
Figure 1. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1.0 TJ = 25°C –0.8 V, VOLTAGE (VOLTS)
–1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V
–0.6 IC = –10 mA –0.4
–50 mA
–100 mA
–250 mA
–500 mA
–0.4
–0.2
–0.2 VCE(sat) @ IC/IB = 10
0 –0.05 –0.1
–0.2
–0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA)
–10
–20
–50
0 –0.5 –1.0
–2.0
–5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA)
–500
Figure 2. Collector Saturation Region
Figure 3. “On” .