MPSW63

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW63/D One Watt Darlington Transistors PNP Silicon COLLECTOR 3 MPSW63 MPSW64 * *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW63 MPSW64 –30 –30 –10 –500 1.0 8.0 2.5 20 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –10 Vdc, IC = 0) V(BR)CES ICBO IEBO –30 — — — –100 –100 Vdc nAdc nAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSW63 MPSW64 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Cu...