PD - 94069
IRG4BC30S-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: optimized for minimum saturation voltage ...
PD - 94069
IRG4BC30S-S
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tight parameter distribution and high efficiency
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions
D2Pak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
600 34 18 68 68 ±20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case )
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
––– 0.50 ––– 1.44
Max.
1.2 ––– 40 –––
Units
°C/W g (oz)
www.irf.com
1
12/28/00
IRG4BC30S-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
∆V(BR)CES/∆TJ
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp...
