PD - 91803
IRG4BC30U-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies...
PD - 91803
IRG4BC30U-S
INSULATED GATE BIPOLAR
TRANSISTOR
Features
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard D2Pak package
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
D 2 Pak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
600 23 12 92 92 ± 20 10 100 42 -55 to + 150
Units
V A
V mJ W
Thermal Resistance
Parameter
RqJC RqJA Junction-to-Case Junction-to-Ambient, ( PCB Mounted,steady-state)*
Typ.
––– –––
Max.
1.2 40
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
www.irf.com
1
IRG4BC30U-S
Electrical Characteristics...
