TMOS POWER FET
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP3N50E/D
™ Data Sheet TMOS E-FET.™ High Energy Power F...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP3N50E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET
Designer's
MTP3N50E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
®
D
G S
CASE 221A–06, Style 5 TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–repetitive (tp ≤ 50 µs) Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temper...
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