SPN01N60C3

Rev. 2.1 SPN01N60C3 VDS @ Tjmax RDS(on) ID 650 6 0.3 SOT-223 4 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance V Ω A 3 2 1 VPS05163 Type Package Ordering Code Marking SPN01N60C3 SOT-223 Q67040-S4208 01N60C3 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, T A = 25°C Symbol ID Value 0.3 0.2 Unit A ID puls VGS VGS Ptot Tj , Tstg 1.6 ±20 ±30 1.8 -55... +150 W °C V Operating and storage temperature Page 1 2004-03-01 Rev. 2.1 SPN01N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 0.8 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=250µΑ, VGS=V DS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJS RthJA Values typ. 35 110 max. 75 72 260...