STP12PF06

www.DataSheet4U.com P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP STripFET™ II POWER MOSFET Table 1: General Features TYPE STP12PF06 STF12PF06 ■ ■ ■ ■ ■ STP12PF06 STF12PF06 Figure 1:Package RDS(on) < 0.20 Ω < 0.20 Ω ID 12 A 12 A VDSS 60 V 60 V TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 TO-220FP DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STP12PF06 STF12PF06 MARKING P12PF06 F12PF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Table 3: ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter STP20PF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature 60 60 ± 20 12 8.4 48 60 0.4 6 200 -55 to 175 (1) ISD ≤12A, di/dt ≤200A/...