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TC58NS100DC

Toshiba
Part Number TC58NS100DC
Manufacturer Toshiba
Description 1 GBit CMOS NAND EPROM
Published Jul 6, 2005
Detailed Description TC58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 1-GBIT (128M × 8 BITS) CMOS NAND E ...
Datasheet PDF File TC58NS100DC PDF File

TC58NS100DC
TC58NS100DC

Overview
TC58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 1-GBIT (128M × 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia DESCRIPTION ) The TC58NS100 is a single 3.
3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).
The TC58NS100 is a serial-type memory device which utilizes the I/O pins for both a...


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