MPF4393

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF4392/D JFETs Switching N–Channel — Depletion 3 GATE 1 DRAIN MPF4392 MPF4393 Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Channel Temperature Range Symbol VDS VDG VGS IG(f) PD Tchannel, Tstg Value 30 30 30 50 350 2.8 – 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA) 1 2 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100°C) Drain–Cutoff Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100°C) Gate Source Voltage (VDS = 15 Vdc, ID = 10 nAdc) MPF4392 MPF4393 V(BR)GSS IGSS — — ID(off) — — VGS – 2.0 – 0.5 — — – 5.0 – 3.0 — — 1.0 0.1 nAdc µAdc Vdc — — 1.0 0.2 nAdc µAdc 30 — — Vdc ON CHARACTERISTICS Zero – Gate –Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Drain–Source On–Voltage (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static Drain–Source On Resistance (ID = 1.0 mAdc, VGS = 0) IDSS MPF4392 MPF4393 VDS(on) MPF4392 MPF4393 rDS(on) MPF4392 MPF4393 — — — — 60 100 — — — — 0.4 0.4 Ω 25 5.0 — — 75 30 Vdc mAdc SMALL– SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = ...