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Part Number IRL510A
Manufacturers Fairchild
Logo Fairchild
Description Advanced Power MOSFET
Datasheet IRL510A DatasheetIRL510A Datasheet (PDF)

  IRL510A   IRL510A
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) IRL510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 100 5.6 4.0 20 ±20 62 5.6 3.7 6.5 37 0.25 - 55 to +175 Units V A A V mJ A mJ V/ns W °C.



IRL510S IRL510A UA78HGA


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