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DMV1500H
DAMPER + MODULATION DIODE FOR VIDEO
Table 1: Main Product Characteristics IF(AV) VRRM trr (max) VF (max) DAMPER 6A 1500 V 125 ns 1.7 V MODUL. 3A 600 V 50 ns 1.4 V
DAMPER MODULATION
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FEATURES AND BENEFITS
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Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2000 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation
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TO-220FPAB DMV1500HFD
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DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220FPAB package includes both the DAMPER diode and the MODULATION diode, thanks to a dedicated design. Assembled on automated line, it offers very low dispersion values on insulating and thermal performanes. Order Codes Part Number DMV1500HFD DMV1500HFD5 Marking DMV1500H DMV1500H
TO-220FPAB F5 Bending DMV1500HFD5 (optional)
September 2004
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Table 3: Absolute Maximum Ratings Symbol VRRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10ms sinusoidal Value Damper Modul. 1500 80 150 600 35 Unit V A °C °C
-40 to +150
Table 4: Thermal Resistance Symbol Rth(j-c) Parameter Junction to case thermal resistance Value 3.6 Unit °C/W
Table 5: Static Electrical Characteristics Value Symbol Parameter Test conditions Damper Modul. Damper Modul. VR = 1500 V VR = 600 V IF = 6 A IF = 3 A 1.5 Tj = 25°C Typ. IR * VF **
Pulse test:
Tj = 125°C Typ. 100 3 1.25 1.1 Max. 1000 50 1.7 1.4
Unit
Max. 100 20 2.3 1.8
Reverse leakage current
µA
Forward voltage drop
* tp = 5 ms, δ < 2%
V
** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations : DAMPER: P = 1.35 x IF(AV) + 0.59 x IF (RMS) MODULATION: P = 1.12 x IF(AV) + 0.092 x IF (RMS)
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Table 6: Recovery Characteristics Value Symbol Parameter Test conditions IF = 100mA IR =100mA IRR = 10mA IF = 1A dIF/dt = -50 A/µs VR =30V Damper Typ. Tj = 25°C 625 Max. Modul. Typ. 110 Max. 350 ns Tj = 25°C 95 125 35 50 Unit
trr
Reverse recovery time
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Table 7: Turn-On Switching Characteristics Symbol Parameter Test conditions IF = 6 A dIF/dt = 80 A/µs VFR = 3 V IF = 3 A dIF/dt = 80 A/µs VFR = 2 V IF = 6 A dIF/dt = 80 A/µs IF = 3 A dIF/dt = 80 A/µs Value Typ. Tj = 100°C 350 ns Tj = 100°C 240 Max. Unit
Damper tfr Forward recovery time Modul.
Damper VFP Peak forward voltage Modul.
Tj = 100°C Tj = 100°C
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25 V 8
Figure 1: Power dissipation versus peak forward current (triangular waveform, δ=0.45)
PF(AV)(W)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
MODULATION diode DAMPER diode
Figure 2: Average forward current versus ambient temperature
IF(AV)(A)
7
Rth(j-a)=Rth(j-c)
6
DAMPER diode
5 4
Rth(j-a)=Rth(j-c)
3 2 1
T
MODULATION diode
IP(A)
0 0
δ=tp/T
25
tp
50
Tamb(°C)
75 100 125 150
Figure 3: Forward voltage drop versus forward current (damper diode)
IFM(A)
15
Figure 4: Forward voltage drop versus forward current (modulation diode)
IFM(A)
10 9
Tj=125°C (maximum values)
Tj=125°C (maximum values)
8 7
10
Tj=125°C (typical values)
6 5 4
Tj=125°C (typical values) Tj=25°C (maximum values)
5
Tj=25°C (maximum values)
3 2
VFM(V)
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VFM(V)
2.4 2.6 2.8 3.0
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Figure 5: Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c)/Rth(j-c)
1.0 0.9 30 0.8 0.7 0.6
MODULATION diode DAMPER diode
Figure 6: Non repetitive peak forward current versus overload duration (damper diode)
IM(A)
35
25 20 15
TC=75°C
TC=25°C
0.5 0.4 0.3 0.2 5 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
t
10
IM
TC=125°C
tp(s)
Single pulse
δ=0.5
t(s)
1.E-02 1.E-01 1.E+00
0 1.E-03
Figure 7: Non repetitive peak forward current versus overload duration (modulation diode)
IM(A)
30
Figure 8: Reverse recovery charges versus dIF/dt (damper diode)
Qrr(nC)
1200
IF=IP Tj=125°C 90% confidence
25
1000
20
TC=25°C
800
15
TC=75°C
600
10
TC=125°C
t
400
5
IM
200
δ=0.5
t(s)
0 1.E-02 1.E-01 1.E+00 0.1
dIF/dt(A/µs)
1.0 10.0
0 1.E-03
Figure 9: Reverse recovery charges versus dIF /dt (modulation diode)
Qrr(nC)
200
IF=IP Tj=125°C 90% confidence
Figure 10: Peak reverse recovery current versus dIF/dt (damper diode)
IRM(A)
2.4 2.2 2.0 1.8 1.6 1.4
IF=IP Tj=125°C 90% confidence
150
100
1.2 1.0 0.8
50
0.6 0.4
dIF/dt(A/µs)
0 0.1 1.0 10.0 100.0
0.2 0.0 0.1
dIF/dt(A/µs)
1.0 10.0
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DMV1500H
Figure 1.