DatasheetsPDF.com

DMV1500H Dataheets PDF



Part Number DMV1500H
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description DAMPER + MODULATION DIODE FOR VIDEO
Datasheet DMV1500H DatasheetDMV1500H Datasheet (PDF)

® DMV1500H DAMPER + MODULATION DIODE FOR VIDEO Table 1: Main Product Characteristics IF(AV) VRRM trr (max) VF (max) DAMPER 6A 1500 V 125 ns 1.7 V MODUL. 3A 600 V 50 ns 1.4 V DAMPER MODULATION 1 2 3 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ ■ ■ Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2000 VRMS Capacitance = 7 pF .

  DMV1500H   DMV1500H


Document
® DMV1500H DAMPER + MODULATION DIODE FOR VIDEO Table 1: Main Product Characteristics IF(AV) VRRM trr (max) VF (max) DAMPER 6A 1500 V 125 ns 1.7 V MODUL. 3A 600 V 50 ns 1.4 V DAMPER MODULATION 1 2 3 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ ■ ■ Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2000 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation 1 2 3 TO-220FPAB DMV1500HFD 2 1 3 DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220FPAB package includes both the DAMPER diode and the MODULATION diode, thanks to a dedicated design. Assembled on automated line, it offers very low dispersion values on insulating and thermal performanes. Order Codes Part Number DMV1500HFD DMV1500HFD5 Marking DMV1500H DMV1500H TO-220FPAB F5 Bending DMV1500HFD5 (optional) September 2004 REV. 1 1/8 DMV1500H Table 3: Absolute Maximum Ratings Symbol VRRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10ms sinusoidal Value Damper Modul. 1500 80 150 600 35 Unit V A °C °C -40 to +150 Table 4: Thermal Resistance Symbol Rth(j-c) Parameter Junction to case thermal resistance Value 3.6 Unit °C/W Table 5: Static Electrical Characteristics Value Symbol Parameter Test conditions Damper Modul. Damper Modul. VR = 1500 V VR = 600 V IF = 6 A IF = 3 A 1.5 Tj = 25°C Typ. IR * VF ** Pulse test: Tj = 125°C Typ. 100 3 1.25 1.1 Max. 1000 50 1.7 1.4 Unit Max. 100 20 2.3 1.8 Reverse leakage current µA Forward voltage drop * tp = 5 ms, δ < 2% V ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations : DAMPER: P = 1.35 x IF(AV) + 0.59 x IF (RMS) MODULATION: P = 1.12 x IF(AV) + 0.092 x IF (RMS) 2 2 Table 6: Recovery Characteristics Value Symbol Parameter Test conditions IF = 100mA IR =100mA IRR = 10mA IF = 1A dIF/dt = -50 A/µs VR =30V Damper Typ. Tj = 25°C 625 Max. Modul. Typ. 110 Max. 350 ns Tj = 25°C 95 125 35 50 Unit trr Reverse recovery time 2/8 DMV1500H Table 7: Turn-On Switching Characteristics Symbol Parameter Test conditions IF = 6 A dIF/dt = 80 A/µs VFR = 3 V IF = 3 A dIF/dt = 80 A/µs VFR = 2 V IF = 6 A dIF/dt = 80 A/µs IF = 3 A dIF/dt = 80 A/µs Value Typ. Tj = 100°C 350 ns Tj = 100°C 240 Max. Unit Damper tfr Forward recovery time Modul. Damper VFP Peak forward voltage Modul. Tj = 100°C Tj = 100°C 18 25 V 8 Figure 1: Power dissipation versus peak forward current (triangular waveform, δ=0.45) PF(AV)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 MODULATION diode DAMPER diode Figure 2: Average forward current versus ambient temperature IF(AV)(A) 7 Rth(j-a)=Rth(j-c) 6 DAMPER diode 5 4 Rth(j-a)=Rth(j-c) 3 2 1 T MODULATION diode IP(A) 0 0 δ=tp/T 25 tp 50 Tamb(°C) 75 100 125 150 Figure 3: Forward voltage drop versus forward current (damper diode) IFM(A) 15 Figure 4: Forward voltage drop versus forward current (modulation diode) IFM(A) 10 9 Tj=125°C (maximum values) Tj=125°C (maximum values) 8 7 10 Tj=125°C (typical values) 6 5 4 Tj=125°C (typical values) Tj=25°C (maximum values) 5 Tj=25°C (maximum values) 3 2 VFM(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VFM(V) 2.4 2.6 2.8 3.0 3/8 DMV1500H Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 30 0.8 0.7 0.6 MODULATION diode DAMPER diode Figure 6: Non repetitive peak forward current versus overload duration (damper diode) IM(A) 35 25 20 15 TC=75°C TC=25°C 0.5 0.4 0.3 0.2 5 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t 10 IM TC=125°C tp(s) Single pulse δ=0.5 t(s) 1.E-02 1.E-01 1.E+00 0 1.E-03 Figure 7: Non repetitive peak forward current versus overload duration (modulation diode) IM(A) 30 Figure 8: Reverse recovery charges versus dIF/dt (damper diode) Qrr(nC) 1200 IF=IP Tj=125°C 90% confidence 25 1000 20 TC=25°C 800 15 TC=75°C 600 10 TC=125°C t 400 5 IM 200 δ=0.5 t(s) 0 1.E-02 1.E-01 1.E+00 0.1 dIF/dt(A/µs) 1.0 10.0 0 1.E-03 Figure 9: Reverse recovery charges versus dIF /dt (modulation diode) Qrr(nC) 200 IF=IP Tj=125°C 90% confidence Figure 10: Peak reverse recovery current versus dIF/dt (damper diode) IRM(A) 2.4 2.2 2.0 1.8 1.6 1.4 IF=IP Tj=125°C 90% confidence 150 100 1.2 1.0 0.8 50 0.6 0.4 dIF/dt(A/µs) 0 0.1 1.0 10.0 100.0 0.2 0.0 0.1 dIF/dt(A/µs) 1.0 10.0 4/8 DMV1500H Figure 1.


DMV1500M DMV1500H KA2130A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)