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STTA806 Dataheets PDF



Part Number STTA806
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
Datasheet STTA806 DatasheetSTTA806 Datasheet (PDF)

® STTA806D/DI/G TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 8A 600V 25ns 1.5V A K K A K FEATURES AND BENEFITS SPECIFICTO”FREEWHEEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE : TO-220AC Electrical insulation : 2500VRMS Capacitance < 7 pF DESCRIPTION The TURBOSWITCH is a very high perf.

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® STTA806D/DI/G TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 8A 600V 25ns 1.5V A K K A K FEATURES AND BENEFITS SPECIFICTO”FREEWHEEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE : TO-220AC Electrical insulation : 2500VRMS Capacitance < 7 pF DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in motor ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj T stg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current TO-220AC STTA806D Insulated TO-220AC STTA806DI K A NC D2PAK STTA806G control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in TO-220AC, insulated TO-220AC or in D2PAK, these 600V devices are particularly intended for use on 240V domestic mains. Value 600 TO-220AC/ D2PAK TO-220ACins. tp=5ms F=5kHz square tp=10 ms sinusoidal 600 30 20 110 90 150 -65 to 150 Unit V V A A A A °C °C Maximum operating junction temperature Storage temperature range TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 3C 1/9 STTA806D/DI/G THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal TO-220AC / D2PAK resistance TO-220AC ins. Conduction power dissipation IF(AV) = 8A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) TO-220AC / D2PAK TO-220AC ins. TO-220AC /D2PAK TO-220AC ins. Conditions Value 2.2 3.3 14.5 16 Unit °C/W W W Tc= 118 °C Tc= 102 °C Tc= 115 °C Tc= 97°C STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Vto rd Test pulse : Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% Test conditions IF =8A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.25 1.5 Max 1.75 1.5 100 4 1.15 43 Unit V V µA mA V mΩ To evaluatethe maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 400V dIF/dt = -64 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 400V dIF/dt = -500 A/µs IF =8A 5.5 14 IF =8A 0.47 Min Typ 25 52 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25°C IF =8 A, dIF/dt = 64 A/µs measured at, 1.1 × VFmax Min Typ Max 500 V 10 Unit ns VFp Peak forward voltage Tj = 25°C IF =8A, dIF/dt = 64 A/µs 2/9 STTA806D/DI/G Fig. 1: Conduction losses versus average current. P1(W) 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 IF(av)(A) 6 7 8 =0 . 5 =1 Fig. 2: Forward voltage drop versus forward current. 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0.1 VFM(V) MAXIMUM VALUES T =0 . 2 =0 . 1 = tp/T tp Tj=125 oC IFM(A) 1 10 100 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt. IRM(A) 32.5 90% CONFIDENCE Tj=125oC 30.0 27.5 VR=400V IF= 16A 25.0 22.5 20.0 17.5 I F= 8A 15.0 12.5 I F= 4A 10.0 7.5 5.0 2.5 dIF/dt(A/ s) 0.0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 5: Reverse recovery time versus dIF/dt. trr(ns) 200 90% CONFIDENCE Tj=125oC 180 VR=400V 160 140 120 100 I F= 8A IF=16A 80 60 IF=4A 40 20 dIF/dt(A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 6: Softness factor (tb/ta) versus dIF/dt. 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 dIF/dt( A/ s) S factor Typical values Tj=125 oC IF<2xI F( av) VR=400V 100 200 300 400 500 600 700 800 900 1000 3/9 STTA806D/DI/G Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 Fig. 8: Transient peak forward voltage versus dIF/dt. VFP(V) 15 14 90% CONFIDENCE Tj=125 oC 13 IF=IF (av) 12 11 10 9 8 7 6 5 4 3 2 1 dIF/dt( A/ s) 0 0 20 40 60 80 100 S factor IRM Tj(oC) 25 50 75 100 125 150 120 140 160 Fig. 9: Forward recovery time versus dIF/dt. tfr(ns) 500 450 400 350 300 250 200 150 100 50 0 0 20 90% CONFIDENCE Tj=125 oC VFr=1.1*VF max. IF=IF(av) dIF/dt(A/ s) 40 60 80 100 120 140 160 4/9 STTA806D/DI/G APPLICATION DATA The TURBOSWITCH is especially designed to provide the lowest overall power losses in any ”FREEWHEEL Mode” application (Fig.A) considering both the diode.


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