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KMM366S1623CT

Samsung

PC100 SDRAM MODULE Preliminary

KMM366S1623CT KMM366S1623CT SDRAM DIMM Preliminary PC100 SDRAM MODULE 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refr...


Samsung

KMM366S1623CT

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Description
KMM366S1623CT KMM366S1623CT SDRAM DIMM Preliminary PC100 SDRAM MODULE 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The KMM366S1623CT is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. Max Freq. (Speed) KMM366S1623CT-G8 125MHz (8ns @ CL=3) KMM366S1623CT-GH 100MHz (10ns @ CL=2) KMM366S1623CT-GL 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the sy...




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