KMM366S403CTL

KMM366S403CTL Revision History Revision .3 (Mar. 1998) PC66 SDRAM MODULE Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV. - AC Operating Condition is changed as defined : VIH(max) = 5.6V AC. The overshoot voltage duration is≤ 3ns. VIL(min) = -2.0V AC. The undershoot voltage duration is≤ 3ns. REV. 3 Mar. '98 KMM366S403CTL KMM366S403CTL SDRAM DIMM PC66 SDRAM MODULE 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S403CTL consists of sixteen CMOS 2M x 8 bit Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.33uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The KMM366S403CTL is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Par...