STK22N05
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STK22N05
s s s s s s s s
V DSS 50 V
R DS( on) < 0.065 ...
STK22N05
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE STK22N05
s s s s s s s s
V DSS 50 V
R DS( on) < 0.065 Ω
ID 22 A
TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
1
2
3
1
2
3
SOT-82
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
SOT-194 (option)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 50 50 ± 20 22 15 88 65 0.43 -65 to 175 175
Unit V V V A A A W W/o C
o o
C C
() Pulse width limited by safe operating area
December 1996
1/10
STK22N05
THERMAL DATA
R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.31 80 0.7 275
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA...