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STK22N05

ST Microelectronics

N-Channel Transistor

STK22N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK22N05 s s s s s s s s V DSS 50 V R DS( on) < 0.065 ...


ST Microelectronics

STK22N05

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STK22N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK22N05 s s s s s s s s V DSS 50 V R DS( on) < 0.065 Ω ID 22 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 1 2 3 1 2 3 SOT-82 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s SOT-194 (option) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 50 50 ± 20 22 15 88 65 0.43 -65 to 175 175 Unit V V V A A A W W/o C o o C C () Pulse width limited by safe operating area December 1996 1/10 STK22N05 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.31 80 0.7 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA...




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