MS2475

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2475 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features DESIGNED FOR HIGH POWER PULSED IFF 720 WATTS (min.) IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.8 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILTY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION DESCRIPTION: The MS2475 is a silicon NPN power transistor designed for IFF applications. The MS2475 is designed to exceed the high peak power requirements of today's IFF systems. Hermetic sealing, gold metalization and internal input matching provide superior long term reliability and broadband performance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCC IC PDISS TJ T STG Parameter Collector-Supply Voltage* Device Current* (TC ≤ 100° C) Power Dissipation* Junction Temperature Storage Temperature Value 55 45 1670 +200 - 65 to + 200 Unit V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance* 0.06 °C/W * Applies only to rated RF operation. MSC0937A.DOC 10-20-98 MS2475 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVCBO BVCER BVEBO Test Conditions IC = 25 mA IC = 25 mA IE = 10 mA VCE = 50 V VCE = 5V IE = 0 mA RBE = 10 Ω IC = 0 mA VBE = 0 V IC = 2A Min. 65 65 3.5 ---10 Value Typ. ---------------- Max. ---------60 250 Unit V V V mA ---- ICES hFE DYNAMIC Symbol POUT VC GP f = 1090 MHz f = 1090 MHz f = ...