MPSA12
Discrete POWER & Signal Technologies
MPSA12
C
BE
TO-92
NPN Darlington Transistor
This device is designed fo...
MPSA12
Discrete POWER & Signal Technologies
MPSA12
C
BE
TO-92
NPN Darlington
Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
20 20 10 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
MPSA12 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
MPSA12
NPN Darlington
Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CES ICBO ICES IEBO Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Emitter Cutof...