STP53N08
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STP53N08
s s s s s s s s
V DSS 80 V
R...
STP53N08
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
PRELIMINARY DATA TYPE STP53N08
s s s s s s s s
V DSS 80 V
R DS(on) < 0.024 Ω
ID 53 A
TYPICAL RDS(on) = 0.018 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM ( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 80 80 ± 20 53 37 212 150 1 -65 to 175 175
Unit V V V A A A W W/ o C
o o
C C
() Pulse width limited by safe operating area
March 1996
1/5
STP53N08
THERMAL DATA
R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol I AR E AS EAR I AR Parameter Avalanche...