Cascadable Silicon Bipolar MMIC Amplifier
Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data
MSA-0635, -0636
Features
• Cascadable 50 Ω Gain Block • Low ...
Description
Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data
MSA-0635, -0636
Features
Cascadable 50 Ω Gain Block Low Operating Voltage: 3.5 V Typical Vd 3 dB Bandwidth: DC to 0.9 GHz High Gain: 19.0␣ dB Typical at 0.5 GHz Low Noise Figure: 2.8 dB Typical at 0.5 GHz Cost Effective Ceramic Microstrip Package
designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0636.
35 micro-X Package[1]
Note: 1. Short leaded 36 package available upon request.
Description
The MSA-0635 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is
Typical Biasing Configuration
R bias VCC > 5 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 3.5 V
2
5965-9585E
6-370
MSA-0635, -0636 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 50 mA 200 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]...
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