TMD5872-2-321

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n n Suitable for VSAT, UNII radio applications High Power P1dB=31.7dBm(MIN.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2-321 High Gain G1dB=26.7dB(MIN.) Broadband Operation f=5.8-6.475GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm oC oC RATINGS 15 -10 10 -30 - +80 -65 - +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 o C) CHARACTERISTICS Operaing Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency VSWRin (small signal) ∆G IDD ηadd VSWRin dB A % 1.2 21 2.0:1 +/- 2.0 1.6 3.0:1 G1dB SYMBOL f P1dB VDD=10V VGG=-5V dB 26.7 CONDITION UNIT GHz dBm MIN. 5.8 31.7 TYP. MAX. 6.475 - u u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. March. 1999 1 TMD5872-2-321 Package Outline Unit i...